Skip to main content
Figure 4 | Nanoscale Research Letters

Figure 4

From: Junction investigation of graphene/silicon Schottky diodes

Figure 4

J-V characteristic curves of G/n-Si devices, rectification and ideality factors. (a) The J-V characteristic curves of G/n-Si devices were collected in dark. (b) The rectification factors (left y-axis) and the ideality factors (right y-axis) of G/n-Si devices with different graphene source and different thickness.

Back to article page