Figure 1From: Gap modification of atomically thin boron nitride by phonon mediated interactionsBn substrate system and interactions in a monolayer of BN. (a) BN substrate system annotated with interactions. Electron-phonon interactions between the BN layer and substrate are poorly screened, and large interactions of strengthf n (m) are possible. Ions in the substrate oscillate with frequency Ω. N sites have energy + Δ and B sites −Δ , opening a gap. The attractive phonon-mediated electronic interaction f binds electrons onto the same site, effectively enhancing the gap. (b) Interactions in a monolayer of BN. Red circles represent N atoms and black circles B atoms. Light blue arrows represent distortions expected from an excess of charge on the site labelled e .Back to article page