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Figure 2 | Nanoscale Research Letters

Figure 2

From: Gap modification of atomically thin boron nitride by phonon mediated interactions

Figure 2

Modification of the BN bandgap. (a) The gap enhancement depends mainly on λ , is weakly dependent on Δ and shows almost no change with Ω. Calculations are made for Δ =t corresponding to a BN gap of 2Δ =4.66 eV, Δ =1.20t (2Δ =5.6 eV), and Δ =0.84t (2Δ =3.92 eV, the tight binding fit from reference [10]). t =2.33 eV, Ω=0.01t=23 meV, Ω=0.03t=70 meV, Ω=0.06t=140 meV, Ω=0.09t=210 meV, covering the full range of phonon frequencies in reference [13].k B T =0.01t (T =268K) and λ ≤1. (b) Variation of the gap with temperature, Ω=0.05t=117 meV and λ =0.2. There is a weak temperature dependence due to the large Δ, consistent with the measurements in reference [15], with gap starting to close only for extremely high temperatures T >8,000 K , presumably above the melting point of the material. Red circles show the size of the gap, red lines are a guide to the eye.

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