Figure 2From: The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealingTop-view SEM of as-deposited poly Ge by UHV-CVD (a) and Ge nano-dot formation procedure (b). Due to the properties of low melting point and higher nucleation process of Ge, dots were self-assembled and formatted dots by the SK growth mode.Back to article page