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Figure 6 | Nanoscale Research Letters

Figure 6

From: The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Figure 6

The cross sectional HR-TEM images. (a) as-deposited poly Ge and (b) Ge dot with laser energy of 700 mJ/cm2. The inset of (b) shows the cross-sectional TEM image of Ge dots. The crystallization quality of Ge dot is also improved as compare with as-deposited poly Ge. (c) The compositions of intermediate layer and dot by EDS after laser annealing. The Ge content of intermediate layer and dot are 49% and 93%, respectively.

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