Figure 7From: The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealingThe Raman spectra. As-deposited poly Ge and Ge nano-dots with laser energy of 400 and 1,000 mJ/cm2. The bulk-Ge is for reference [14]. The inset shows the abrupt transition in strain which occurred between 600 to 700 mJ/cm2.Back to article page