Figure 1From: The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAsPL intensity images from the edge of the patterned area. Intensity within the spectral range of 850 to 1,000 nm was measured at temperatures of 5 K (a), 40 K (b), and 70 K (c). The excitation power and wavelength were 1.77 μW and 532 nm, respectively.Back to article page