Figure 3From: The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAsPeak energies of the exciton (X) transitions as a function of temperature. Solid lines indicate the slope of the temperature dependency of the InAs band gap energy obtained by Varshni's law. The parameters are α = 0.27 meV/K and β = 135 K. The inset shows the integrated PL intensities of the exciton transitions.Back to article page