Table 1 Standard E° of oxidants of interest and approximate positions of VBM at the silicon surface
From: Electroless etching of Si with IO3– and related species
Species | E°/V | Half-reaction |
---|---|---|
| 0.5355 |
|
VBM (n, surface) | 0.67 | |
| 0.771 |
|
| 0.8665 |
|
VBM (p, surface) | 0.9 | |
| 0.957 |
|
| 0.991 |
|
| 1.0873 |
|
| 1.195 |
|
| 1.350 |
|
| 1.35827 |
|
| 1.47 |
|
| 1.482 |
|
| 1.507 |
|
| 1.72 |
|
| 2.0 |
|