Figure 5From: Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free techniqueTransfer characteristics of the DC and UC NW devices. Mid-sized (75 × 30 nm) and large-sized (125 × 40 nm) DC NW devices are also plotted for comparison. All the devices characterized here are with channel length of 0.4 μm.Back to article page