Figure 3From: Plasma-deposited fluoropolymer film mask for local porous silicon formationUnder-mask etching as a function of the PoSi region thickness. The anodizations were performed at 28 mA cm−2 in a HF (30 wt.%)-acetic acid (25 wt.%) electrolyte in p-type 20-mΩ cm silicon.Back to article page