Figure 12From: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceThe typical read endurance and data retention characteristic for the device with Ti nanolayer. (a)Typical read endurance and (b) data retention characteristics for the device with Ti nanolayer at the Cu/TaOxinterface (S2). The device is capable of operation at a low current compliance of 0.1 μA.Back to article page