Figure 2From: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceTEM and HRTEM images of Al/Cu/TaO x /W structure. (a) TEM image of an Al/Cu/TaOx/W structure. Enlarged images with (b) scale bars of 50 nm and (c) 10 nm. (d) HRTEM image from (a) with a scale bar of 10 nm.Back to article page