Figure 8From: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceThe cumulative probability plots of LRS and HRS. Cumulative probability plots of LRS and HRS under a CC of 500 μA for (a) Al/Cu/TaOx/W and (b) Al/Cu/Ti/TaOx/W devices with cycle-to-cycle and device-to-device measurements.Back to article page