Figure 9From: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceThe schematic view of filament formation/dissolution. Schematic view of filament formation/dissolution under SET and RESET operations for w/ and w/o Ti nanolayer resistive switching memories. Filament formation (a) and dissolution (b) for w/o Ti nanolayer devices. Controllable filament formation (c) and dissolution (d) for w/ Ti nanolayer resistive switching memory devices.Back to article page