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Figure 9 | Nanoscale Research Letters

Figure 9

From: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Figure 9

The schematic view of filament formation/dissolution. Schematic view of filament formation/dissolution under SET and RESET operations for w/ and w/o Ti nanolayer resistive switching memories. Filament formation (a) and dissolution (b) for w/o Ti nanolayer devices. Controllable filament formation (c) and dissolution (d) for w/ Ti nanolayer resistive switching memory devices.

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