Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Rahaman, Sheikh Ziaur; Maikap, Siddheswar; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T; Kao, Ming-Jer; Tsai, Ming-Jinn

doi:10.1186/1556-276X-7-345

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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO_x interface

Last updated: Thu, 25 Apr 2024 13:50:14 UTC

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