Figure 3From: Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusionThe STEM image of the distribution and the EDX line scan. (a) STEM image of the distribution of components at the center and edge positions of GeSi islands, (b) EDX line scan taken along the indicated lines shown in the STEM image. EDX data were acquired along the lines near the center (red line) and edge (blue line) of the islands.Back to article page