Figure 4From: Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusionThe radical component of the stress field vs. the ration of the Ge shell radius. The radial component of the stress field in Ge shell near the Ge/Si interface vs. the ratio of the Ge shell radius to the Si core radius (b/a). Insert shows a schematic diagram of the system.Back to article page