Figure 1From: Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline facesDouble-tank electrochemical cell developed for small samples by AMMT and GREMAN ( Ø aperture = 1 cm or 1 in.). The holder is sealed by a pneumatic system. A stirring rod is used to homogenize the electrolyte during the anodization.Back to article page