Figure 2From: Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline facesMeasured potential during anodization. The anodization was done at a fixed current density of 25.5 mA/cm2 in the case of the C and Si faces for a 4 H-SiC sample.Back to article page