Figure 6From: Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline facesEvolution of the porous SiC morphology for a constant applied current density of 63.3 mA/cm2. The cleaved sample was observed (a) near the surface and (b) at 20-μm and (c) 40-μm depths. The observed sample (SEM) was etched from the C face, and the total layer thickness is about 50 μm.Back to article page