Figure 3From: Nucleation control for the growth of vertically aligned GaN nanowiresSEM images of the GaN nanowires. Grown on the c-plane GaN substrate with the Ga source placed at various distances to the substrate. The distances were (a) and (b) 15 cm, (c) and (d) 20 cm, and (e) and (f) 25 cm.Back to article page