Figure 2From: Copper-selective electrochemical filling of macropore arrays for through-silicon via applicationsSelective TSV formation by local macropore masking before copper electrochemical deposition. (a) Electrochemical etching of silicon leading to through-silicon structures. (b) Local masking of macropores limiting the electrolyte penetration into opened regions. (c) Local filling of the macropore arrays with copper by electrochemical deposition. (d) Mask removal.Back to article page