Figure 1From: Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperatureRoom temperature PL spectra of four-bilayer samples. With the Si spacer overgrowth at 520 °C (sample A), 550 °C (sample B), and 580 °C (sample C). The PL decrease around 1,460 nm induce by the color filter of instrumentation is marked by a line.Back to article page