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Table 1 Magnetization data measured at T= 4 K and T= 250 K

From: Porous silicon/Ni composites of high coercivity due to magnetic field-assisted etching

  Coercivity (Oe) magnetic field perpendicular to surface Coercivity (Oe) magnetic field parallel to surface Remanence M/MS(emu) magnetic field perpendicular to surface Remanence M/MS(emu) magnetic field parallel to surface
T = 4 K (conv.) 270 180 0.42 0.36
T = 100 K (conv.) 200 110 0.40 0.28
T = 250 K (conv.) 160 75 0.38 0.22
T = 4 K (mag.) 660 190 0.85 0.38
T = 100 K (mag.) 570 125 0.81 0.34
T = 250 K (mag.) 540 100 0.78 0.28
  1. conv., samples prepared by conventional etching; mag., samples prepared by magnetic field-assisted etching.