Table 1 Magnetization data measured at T = 4 K and T = 250 K
From: Porous silicon/Ni composites of high coercivity due to magnetic field-assisted etching
Coercivity (Oe) magnetic field perpendicular to surface | Coercivity (Oe) magnetic field parallel to surface | Remanence M/MS(emu) magnetic field perpendicular to surface | Remanence M/MS(emu) magnetic field parallel to surface | |
|---|---|---|---|---|
T = 4 K (conv.) | 270 | 180 | 0.42 | 0.36 |
T = 100 K (conv.) | 200 | 110 | 0.40 | 0.28 |
T = 250 K (conv.) | 160 | 75 | 0.38 | 0.22 |
T = 4 K (mag.) | 660 | 190 | 0.85 | 0.38 |
T = 100 K (mag.) | 570 | 125 | 0.81 | 0.34 |
T = 250 K (mag.) | 540 | 100 | 0.78 | 0.28 |