Table 2 Deviation of the Si wall thicknesses and channel characteristics for the fabricated triple-cavity PhC
m | dSi + dair(nm) | dSi ± δ dSi(nm) | ±Δ λc 1(nm) | ±Δ λc 2(nm) | ±Δ λc 3(nm) | λ s ± Δ λs 12(nm) λ s ± Δ λs 23(nm) |
---|---|---|---|---|---|---|
1 | 1,400 | 325 ± 35 | −22 | −46.8 | −18.5 | 153.3 − 24.3 |
(± 10.8 %) | 153.3 + 27.7 | |||||
2 | 900 | 360 ± 20 | +12.5 | +7.7 | +12.5 | 43 − 6 |
(± 5.6 %) | 43 + 6 | |||||
3 | 900 | 486 ± 20 | +4 | +5.6 | +5.3 | 20 − 1 |
20 + 2 | ||||||
(± 4 %) |