Table 1 Description of the dwell time, etching time, and spacing
Based FIB Si | FIB machining parameters | Dwell time (μs) | Etching time (min) | Spacing (nm) |
|---|---|---|---|---|
A_1 | 30 kV voltage and 10 pa accelerate current | 1 | 8 | 15 ± 1 |
A_2 | 1 | 11 | 18 ± 1 | |
A_3 | 5 | 8 | 22 ± 2 |
Based FIB Si | FIB machining parameters | Dwell time (μs) | Etching time (min) | Spacing (nm) |
|---|---|---|---|---|
A_1 | 30 kV voltage and 10 pa accelerate current | 1 | 8 | 15 ± 1 |
A_2 | 1 | 11 | 18 ± 1 | |
A_3 | 5 | 8 | 22 ± 2 |