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Table 1 Description of the dwell time, etching time, and spacing

From: High performance surface-enhanced Raman scattering substrates of Si-based Au film developed by focused ion beam nanofabrication

Based FIB Si FIB machining parameters Dwell time (μs) Etching time (min) Spacing (nm)
A_1 30 kV voltage and 10 pa accelerate current 1 8 15 ± 1
A_2   1 11 18 ± 1
A_3   5 8 22 ± 2