Figure 3From: Morphological and nanostructural features of porous silicon prepared by electrochemical etchingCross-section and plane view SEM images. Micrographs (a), (b) and (c) are cross-section views of the samples with resistivities of 5 × 10−3, 4 and 15 Ω·cm, respectively. Micrographs (d), (e) and (f) are plane views of the samples with resistivities of 5 × 10−3, 4, and 15 Ω·cm, respectively.Back to article page