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Figure 11 | Nanoscale Research Letters

Figure 11

From: Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Figure 11

Schematics of band structures of the Si p–i–n -diodes with Ge QD arrays represented in Figure 1. (a) R 163, (b) R 166; figures ‘1’, arrows and wavy lines indicate potential barriers for holes in the valence band (E v) which are associated with the Ge QD arrays; black and shaded parts of potential wells show bands of filled (above the Fermi level F) and empty (below F) energy levels in the QD ensemble; two vertical wavy lines in panel (b) indicate a gap in the drawing of a very thick buffer layer of Si (1690 nm) deposited on the n-Si substrate.

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