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Figure 5 | Nanoscale Research Letters

Figure 5

From: Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Figure 5

RHEED patterns of Ge/Si(001) deposited at 600℃ obtained during sample cooling. hGe= 6 Å; E = 10 keV, [110] azimuth; cooling rate is 0.4℃/s (see the cooling diagram in Ref.[10]); (a) T=600℃, before cooling; (b)–(d) during cooling, time from beginning of cooling (min.): (b) 1, (c) 2, (d) 3; (e) room temperature, after cooling; arrows indicate the arising ½-reflexes to demonstrate a process of the (2×1) pattern appearance; the images were cut from frames of a film.

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