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Figure 7 | Nanoscale Research Letters

Figure 7

From: Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Figure 7

HRTEM images of the one-layer Ge/Si structures with buried Ge clusters. h Ge = 10 Å (see Figure2c); (a) a perfect epitaxial structure of Ge and Si layers; the mark is 10 nm; (b), (c) a huge cluster (> 3,5 nm high) gives rise to tensile strain generating point and extended defects in the Si cap, the stress field spreads under the cluster [the mark is 10 nm in (b)]; (d) a magnified image obtained from the tensile domain, extended defects are seen; ‘1’ denotes Ge clusters, ‘2’ is a domain under tensile stress, ‘3’ indicates a twin boundary.

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