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Figure 8 | Nanoscale Research Letters

Figure 8

From: Graphite/InP and graphite/GaN Schottky barriers with electrophoretically deposited Pd or Pt nanoparticles for hydrogen detection

Figure 8

Forward and reverse current–voltage characteristics of four types of Schottky diodes. The type of each diode is shown in the legend. Forward currents at a voltage of 1 V are many orders of magnitude larger than the reverse ones for all diodes. Actual reverse currents of GaN diodes are smaller than the shown values whose measurements are limited by the ability of the equipment.

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