Figure 5From: 'Wagon-wheel' mask as a tool to study anisotropy of porous silicon formation rateAngular dependence in polar coordinates. For R(θ) (a,b,c) and for the corresponding etching rates V = f(θ) (d,e,f), obtained on a (111) wafer (a and d) etched at a current I = 800 mA for t = 10 min and on (100) (b and e) and (110) (c and f) wafers etched at I = 50 mA for t = 70 min.Back to article page