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Table 1 Parameter A for different crystallographic orientations and etching currents

From: 'Wagon-wheel' mask as a tool to study anisotropy of porous silicon formation rate

I(mA) jaav(mA/cm2) <110> <111> <112> <113> <100>
20 9 0.836 0.750 0.824 0.900 1
50 22 0.846 0.786 0.850 0.914 1
400 175 0.868 0.870 0.900 0.942 1
800 350 0.870 0.882 0.905 0.946 1
  1. ajav= (j0+ j f )/2 = 0.825 j0.