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Table 1 Parameter A for different crystallographic orientations and etching currents

From: 'Wagon-wheel' mask as a tool to study anisotropy of porous silicon formation rate

I(mA)

jaav(mA/cm2)

<110>

<111>

<112>

<113>

<100>

20

9

0.836

0.750

0.824

0.900

1

50

22

0.846

0.786

0.850

0.914

1

400

175

0.868

0.870

0.900

0.942

1

800

350

0.870

0.882

0.905

0.946

1

  1. ajav= (j0+ j f )/2 = 0.825 j0.

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