Table 1 Parameter A for different crystallographic orientations and etching currents
From: 'Wagon-wheel' mask as a tool to study anisotropy of porous silicon formation rate
I(mA) | jaav(mA/cm2) | <110> | <111> | <112> | <113> | <100> |
---|---|---|---|---|---|---|
20 | 9 | 0.836 | 0.750 | 0.824 | 0.900 | 1 |
50 | 22 | 0.846 | 0.786 | 0.850 | 0.914 | 1 |
400 | 175 | 0.868 | 0.870 | 0.900 | 0.942 | 1 |
800 | 350 | 0.870 | 0.882 | 0.905 | 0.946 | 1 |