Table 1 Electrical performance of 3D III-V nMOSFET and nMESFET with 0.6-μm gate width and 0.5-μm length

I_on/I_off ratio

2.54 × 10⁵

1.17 × 10²

I_on (μA) at V_GS = V_DS = 1 V

37

58

V_th (V) at V_DS = 0.1 V

−0.25

−1.5

SS (mV/decade) at V_DS = 1 V

80

123

SS (mV/decade) at V_DS = 0.1 V

68

109

DIBL (mV/V)

47

120