Figure 1From: Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistorsMeasured C - V curves at room temperature of the Ni Schottky contacts. With different areas for the devices with drain-to-source distances of 60 (a), 20 (b), and 15 and 9 μm (c).Back to article page