Figure 2From: Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistorsCalculated 2DEG electron density n 2D under different gate biases. They are for samples with drain-to-source distances of 60 (a), 20 (b), and 15 and 9 μm (c).Back to article page