Table 1 Comparison of the room-temperature photoconductive performance of single UANs with other nanostructures
Photosensitive properties | ||||||
---|---|---|---|---|---|---|
Nanostructure | Operation voltage (V) | The ratio of photocurrent to dark current (IP/ID) | Detector current responsivity (R λ ) (A/W) | Response time | Device stability fluctuation | Reference |
In2Se3 nanobelt | 3 | 5 | 89 | <0.3 s | <10% | [22] |
ZnSe nanowire | 30 | Approximately 10 | 0.12 | <0.3 s | <8% | [23] |
CdS nanobelt | 1 | Approximately 10 | 7.3×104 | Approximately 20 μs | <3% | [24] |
ZnO nanowire | 2 | 8 | Not given | Approximately 50 s | <20% | [25] |
AlN nanowire | 10 | 4.5 | Not given | Approximately 1 s | <5% | [20] |
UAN | 40 | 20 | 2.7×106 | Approximately 1 ms | <2% | In this research |