Figure 4From: Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layerSEM images of GaOOH rods. These rods are grown on ITO electrode of LEDs with and without ATO seed layer under different cathodic voltages for 100 min at 80°C. (a) Bare ITO, −2 V; (b) ATO/ITO, −1.8 V; (c) ATO/ITO, −2 V; and (d) ATO/ITO, −2.2 V.Back to article page