Figure 6From: Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layerMeasured L - I - V curves of LEDs with and without GaOOH NRAs. They are grown at −2 V in CW operation at 298 K. The inset shows the L-I curves (top) of the LEDs with and without GaOOH NRAs grown at different cathodic voltages of −1.8 and −2.2 V and the cross-sectional SEM image (bottom) of GaOOH NRAs grown on the ATO/ITO surface of the LED at −2 V.Back to article page