Figure 11From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFETCutoff frequency for CNTFET. Cutoff frequency for CNTFET with interconnect length from 0.01 to 100 μm with a source and drain contact area equivalent to that of a 45-nm MOSFET and substrate insulator thickness of 100-nm and 500-nm.Back to article page