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Table 1 Source and drain capacitance for multiple substrate insulator thickness

From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Substrate insulator thickness (nm)  C sbor C db(aF)  I ds(μA) at V G = 1 V
10 34.53 47.395
50 6.906 47.340
100 3.453 47.272
200 1.727 47.135
300 1.151 46.998
400 0.863 46.860
500 0.691 46.723