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Table 1 Source and drain capacitance for multiple substrate insulator thickness

From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Substrate insulator thickness (nm)

 C sbor C db(aF)

 I ds(μA) at V G = 1 V

10

34.53

47.395

50

6.906

47.340

100

3.453

47.272

200

1.727

47.135

300

1.151

46.998

400

0.863

46.860

500

0.691

46.723

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