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Table 2 Device model specification at  V  GS = 1 V

From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Parameter

CNTFET benchmarking

 

CNTFET

MOSFET

Channel length, L

50 nm

45 nm

Contact width, Wcontact

100 nm

-

Channel width, W

-

125 nm

Channel area

5 × 10−15 m2

5.63 × 10−15 m2

Nanotube diameter

1.5437 nm

-

Chiral vector [n,m]

[20,0]

-

Maximum current, Idmax

46.56 μA

50.20 μA

Transconductance, gm

68.1 μS

148 μS

Carrier density, Idmax / [d or W]

30.16 μA/nm

0.40 μA/nm

Gate capacitance, CG

14.85 aF

65.8 aF

Drain capacitance, Cd

0.59 aF

19.0 aF

Source capacitance, Cs

1.43 aF

78.7 aF

Substrate capacitance, Csub

1.60 aF

6.52 aF

Total terminal capacitance, Cter

18.47 aF

209.02 aF

Intrinsic capacitance, Cint= Cgd+ Cdb

21.29 aF

37.40 aF

Load capacitance, CL at 1 GHz

46.54 fF

50.13 fF

Cutoff frequency with 5-μm wire

13.57 GHz

27.72 GHz

Drain-induced barrier lowering

40.85 mV/V

83.89 mV/V

Subthreshold swing

72.3 mV/decade

113.67 mV/decade

On-off ratio

2.99 × 104

9.54 × 106

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