Table 2 Device model specification at V GS = 1 V
Parameter | CNTFET benchmarking | |
---|---|---|
CNTFET | MOSFET | |
Channel length, L | 50 nm | 45 nm |
Contact width, Wcontact | 100 nm | - |
Channel width, W | - | 125 nm |
Channel area | 5 × 10−15 m2 | 5.63 × 10−15 m2 |
Nanotube diameter | 1.5437 nm | - |
Chiral vector [n,m] | [20,0] | - |
Maximum current, Idmax | 46.56 μA | 50.20 μA |
Transconductance, gm | 68.1 μS | 148 μS |
Carrier density, Idmax / [d or W] | 30.16 μA/nm | 0.40 μA/nm |
Gate capacitance, CG | 14.85 aF | 65.8 aF |
Drain capacitance, Cd | 0.59 aF | 19.0 aF |
Source capacitance, Cs | 1.43 aF | 78.7 aF |
Substrate capacitance, Csub | 1.60 aF | 6.52 aF |
Total terminal capacitance, Cter | 18.47 aF | 209.02 aF |
Intrinsic capacitance, Cint = Cgd + Cdb | 21.29 aF | 37.40 aF |
Load capacitance, CL at 1 GHz | 46.54 fF | 50.13 fF |
Cutoff frequency with 5-μm wire | 13.57 GHz | 27.72 GHz |
Drain-induced barrier lowering | 40.85 mV/V | 83.89 mV/V |
Subthreshold swing | 72.3 mV/decade | 113.67 mV/decade |
On-off ratio | 2.99 × 104 | 9.54 × 106 |