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Table 2 Device model specification at  V  GS = 1 V

From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Parameter CNTFET benchmarking
  CNTFET MOSFET
Channel length, L 50 nm 45 nm
Contact width, Wcontact 100 nm -
Channel width, W - 125 nm
Channel area 5 × 10−15 m2 5.63 × 10−15 m2
Nanotube diameter 1.5437 nm -
Chiral vector [n,m] [20,0] -
Maximum current, Idmax 46.56 μA 50.20 μA
Transconductance, gm 68.1 μS 148 μS
Carrier density, Idmax / [d or W] 30.16 μA/nm 0.40 μA/nm
Gate capacitance, CG 14.85 aF 65.8 aF
Drain capacitance, Cd 0.59 aF 19.0 aF
Source capacitance, Cs 1.43 aF 78.7 aF
Substrate capacitance, Csub 1.60 aF 6.52 aF
Total terminal capacitance, Cter 18.47 aF 209.02 aF
Intrinsic capacitance, Cint= Cgd+ Cdb 21.29 aF 37.40 aF
Load capacitance, CL at 1 GHz 46.54 fF 50.13 fF
Cutoff frequency with 5-μm wire 13.57 GHz 27.72 GHz
Drain-induced barrier lowering 40.85 mV/V 83.89 mV/V
Subthreshold swing 72.3 mV/decade 113.67 mV/decade
On-off ratio 2.99 × 104 9.54 × 106