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Table 1 Experimental parameters for the deposition of InN films/nanorods

From: Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

Sample

Morphology

Temperature (°C)

RF-plasma power (W)

V/III ratio

1

Film

500

400

0.75

2

Rods

500

350

2.5

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