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Table 1 Experimental parameters for the deposition of InN films/nanorods
From: Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
| Sample | Morphology | Temperature (°C) | RF-plasma power (W) | V/III ratio |
|---|---|---|---|---|
| 1 | Film | 500 | 400 | 0.75 |
| 2 | Rods | 500 | 350 | 2.5 |
