Figure 1From: Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiCPorous silicon carbide model. In the upper panel, the original 32-atom supercell is shown. The squares represent the atoms removed to create the porous structures depicted. The lower panels present pSiC with (a) a Si-rich surface with a double-bonded O and (b) a C-rich surface with a bridge-bonded O. The yellow, gray, light-gray, and red spheres represent Si, C, H, and O atoms, respectively.Back to article page