Figure 4From: Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiCLocal density of states of pSiC. LDOS of the 2-oxygen bridge-bonded porous SiC with (a) Si- and (b) C-rich surfaces with 15.6% (top panels) and 40.6% (lower panels) porosities are shown. The black, green, gray, and red lines represent the LDOS of C, Si, H, and O atoms, respectively. In the inset, the relaxed atomic structure model used to calculate each DOS is shown.Back to article page