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Figure 5 | Nanoscale Research Letters

Figure 5

From: Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiC

Figure 5

Electronic band structure and density of states of the oxygenated Si-rich pSiC surface. We show the electronic band structures (left panel) and densities of states (right panel) of the (a) 3-oxygen and (b) 4-oxygen surfaces; the insets illustrate the corresponding optimized atomic structure models. For the LDOS, the black, green, gray, and red lines represent the contribution of C, Si, H, and O atoms, respectively.

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