Figure 2
From: Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
XEDS analysis. (a) A [] cross-sectional TEM image of a relaxed InAs island. Straight lines ABCD and EFG indicate the positions from which XEDS data were obtained; (b) XEDS data detected along the line ABCD; (c) XEDS data detected along the line EFG.
