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Table 1 The material parameters used in scattering calculations (adopted from [[10],[1315]])

From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Parameter InN GaN GaxIn1-xN
High-frequency dielectric constant ε = 8.4 ε = 5.5 ε = 8.4 2.9 x
Static dielectric constant ε s = 15.3 ε s = 8.9 ε s = 15.3 6.4 x
Electron effective mass m * = 0.11 m 0 m * = 0.22 m 0 m * = 0.1 + 0.12 x m 0
LO-phonon energy 73 meV 92 meV 73 + 11.3 x + 12 x 2 meV
LA-phonon velocity v s = 5.17 . 10 3 ms 1 v s = 6.59 . 10 3 ms 1 v s = 5.17 + 1.42 x . 10 3 ms 1
Density of crystal ρ = 6.81 . 10 3 kgm 3 ρ = 6.15 . 10 3 kgm 3 ρ = 6.81 0.7 x . 10 3 kgm 3
Electron wave vector at Fermi level k F = 4.61 . 10 8 m 1 k F = 7.3 . 10 8 m 1 k F = 7.3 + 2.69 x . 10 8 m 1
The electromechanical coupling coefficient K 2 = 0.028 K 2 = 0.038 K 2 = 0.028 + 0.01 x
Lattice constants a = 3.533 10 10 m c = 5.693 10 10 m a = 3.189 . 10 10 m c = 5.185 . 10 10 m a = 3.533 0.344 x . 10 10 m c = 5.693 0.508 x . 10 10 m
Occupied volume by an atom Ω 0 = 3 4 a 2 c Ω 0 = 3 4 a 2 c Ω 0 = 3 4 a 2 c
Deformation potential Ξ = 7.1 eV Ξ = 8.3 eV Ξ = 7.1 1.2 x eV
Alloy potential U A = 2.72 x 10 19 V
  1. LA-phonon, longitudinal acoustic phonon; LO-phonon, longitudinal optical phonon.