Table 1 The material parameters used in scattering calculations (adopted from [[10],[13–15]])
From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
Parameter | InN | GaN | GaxIn1-xN |
---|---|---|---|
High-frequency dielectric constant |
|
|
|
Static dielectric constant |
|
|
|
Electron effective mass |
|
|
|
LO-phonon energy |
|
|
|
LA-phonon velocity |
|
|
|
Density of crystal |
|
|
|
Electron wave vector at Fermi level |
|
|
|
The electromechanical coupling coefficient |
|
|
|
Lattice constants |
|
|
|
Occupied volume by an atom |
|
|
|
Deformation potential |
|
|
|
Alloy potential | − | − |
|