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Table 1 The material parameters used in scattering calculations (adopted from [[10],[1315]])

From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Parameter

InN

GaN

GaxIn1-xN

High-frequency dielectric constant

ε = 8.4

ε = 5.5

ε = 8.4 2.9 x

Static dielectric constant

ε s = 15.3

ε s = 8.9

ε s = 15.3 6.4 x

Electron effective mass

m * = 0.11 m 0

m * = 0.22 m 0

m * = 0.1 + 0.12 x m 0

LO-phonon energy

73 meV

92 meV

73 + 11.3 x + 12 x 2 meV

LA-phonon velocity

v s = 5.17 . 10 3 ms 1

v s = 6.59 . 10 3 ms 1

v s = 5.17 + 1.42 x . 10 3 ms 1

Density of crystal

ρ = 6.81 . 10 3 kgm 3

ρ = 6.15 . 10 3 kgm 3

ρ = 6.81 0.7 x . 10 3 kgm 3

Electron wave vector at Fermi level

k F = 4.61 . 10 8 m 1

k F = 7.3 . 10 8 m 1

k F = 7.3 + 2.69 x . 10 8 m 1

The electromechanical coupling coefficient

K 2 = 0.028

K 2 = 0.038

K 2 = 0.028 + 0.01 x

Lattice constants

a = 3.533 10 10 m c = 5.693 10 10 m

a = 3.189 . 10 10 m c = 5.185 . 10 10 m

a = 3.533 0.344 x . 10 10 m c = 5.693 0.508 x . 10 10 m

Occupied volume by an atom

Ω 0 = 3 4 a 2 c

Ω 0 = 3 4 a 2 c

Ω 0 = 3 4 a 2 c

Deformation potential

Ξ = 7.1 eV

Ξ = 8.3 eV

Ξ = 7.1 1.2 x eV

Alloy potential

U A = 2.72 x 10 19 V

  1. LA-phonon, longitudinal acoustic phonon; LO-phonon, longitudinal optical phonon.

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