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Table 3 The values of the parameters used in the calculations

From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Sample Δ(nm) Λ(nm) Dislocation density (×1010 cm−2)
Ga0.06In0.94 N 3.6 1.4 (four monolayer) 0.1
Ga0.32In0.68 N 6.4 3.4 (ten monolayer) 0.3
Ga0.52 In0.48 N 6.7 3.4 (ten monolayer) 3.8