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Table 3 The values of the parameters used in the calculations

From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Sample

Δ(nm)

Λ(nm)

Dislocation density (×1010 cm−2)

Ga0.06In0.94 N

3.6

1.4 (four monolayer)

0.1

Ga0.32In0.68 N

6.4

3.4 (ten monolayer)

0.3

Ga0.52 In0.48 N

6.7

3.4 (ten monolayer)

3.8

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