Table 3 The values of the parameters used in the calculations
From: The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
Sample | Δ(nm) | Λ(nm) | Dislocation density (×1010 cm−2) |
---|---|---|---|
Ga0.06In0.94 N | 3.6 | 1.4 (four monolayer) | 0.1 |
Ga0.32In0.68 N | 6.4 | 3.4 (ten monolayer) | 0.3 |
Ga0.52 In0.48 N | 6.7 | 3.4 (ten monolayer) | 3.8 |